dcr2220y65 phase control thy ristor ds5835 - 2 m arch 2013 (ln 3 0241 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repet itive peak voltages v drm and v rrm v conditions dcr2220y65* dcr2220y60 dcr2220y55 dcr2220y50 6500 6000 5500 5000 t vj = - 40c to 125c, i drm = i rrm = 300ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades ava ilable. * 6200v @ - 40 0 c, 6500v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr2220y65 note: please use the complete part number when ordering and quote this num ber in any future correspondence relating to your order. key parameters v drm 6500v i t(av) 2220a i tsm 30000a dv/dt* 1500v/s di/dt 300a/s * higher dv/dt selections available outline type code: y (see package details for further informati on) fig. 1 package outline
semiconductor dcr2220y65 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 2220 a i t(r ms) rms value - 3487 a i t continuous (direct) on - state current - 3270 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 30.0 ka i 2 t i 2 t for fusing v r = 0 4.50 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00835 c/w single side cooled anode dc - 0.0134 c/w cathode dc - 0.023 c/w r th(c - h) thermal resistance C case to heatsink clamping force 54.0kn double side - 0.002 c/w (with mounting compound) single side - 0.004 c/w t vj virtual junction temperature blockin g v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 48 59 kn
semiconductor dcr2220y65 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state curren t at v rrm /v drm , t case = 125c - 300 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 150 a/s gate source 3 0v, 10 ? , non - repetitive - 300 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500a to 3000a at t case = 125c - 1.0 v threshold voltage C high level 3000a to 7200a at t case = 125c - 1.237 v r t on - state slope resistance C low level 500a to 3000a at t case = 125c - 0.4286 m ? on - state slope resistance C high level 3000a to 7200a at t case = 125c - 0.3518 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/s, - 1200 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt C 1a/s, 2400 6000 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr2220y65 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0. 4 v i gt gate trigger current v drm = 5v, t case = 25c 40 0 ma i gd gate non - trigger current at 50% v drm, t case = 125c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.537658 b = 0.064222 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000301 d = 0.005935 these values are valid for t j = 125c for i t 100a to 7200a 0 1000 2000 3000 4000 5000 6000 7000 1.0 2.0 3.0 4.0 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) min 125c max 125c min 25c max 25c
semiconductor dcr2220y65 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum pe rmissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1000 2000 3000 4000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 3500 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor dcr2220y65 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 0 5 10 15 20 25 0.001 0.01 0.1 1 10 100 time ( s ) thermal impedance, z th(j-c) - ( c/kw) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.612 1.7721 3.1053 2.8608 t i (s) 0.010332 0.056415 0.333082 1.6323 anode side cooled r i (c/kw) 0.7009 1.9388 3.61 7.1383 t i (s) 0.011328 0.065993 0.419695 9.0612 cathode side cooled r i (c/kw) 0.6728 2.0168 1.7306 18.6391 t i (s) 0.010954 0.065544 0.30379 5.7274 z th = ? i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 0.94 0.65 180 0.94 0.64 180 0.94 0.64 120 1.09 0.92 120 1.08 0.91 120 1.08 0.91 90 1.24 1.07 90 1.23 1.06 90 1.24 1.06 60 1.38 1.23 60 1.37 1.22 60 1.37 1.22 30 1.49 1.40 30 1.47 1.38 30 1.48 1.39 15 1.54 1.49 15 1.52 1.47 15 1.53 1.48
semiconductor dcr2220y65 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 reverse recovery current f ig.13 reverse recovery charge 0 100 200 300 400 500 600 700 0 10 20 30 rate of decay of forward current, di/dt - (a/us) reverse recovery current, i rr - (a) i rrmin = 40.014*(di/dt) 0.8087 i rrmax = 58.166*(di/dt) 0.7385 conditions: tj = 125 o c, v rpeak ~ 3900v v rm ~ 2600v snubber as appropriate to control reverse voltages 0 5000 10000 15000 20000 25000 30000 0 10 20 30 rate of decay of forward current, di/dt - (a/us) stored charge, qs - (uc) q smax = 5921*(di/dt) 0.4669 q smin = 2786.5*(di/dt) 0.5921 conditions: tj=125 o c, v rpeak ~ 3900v v rm ~ 2600v snubber as appropriate to control reverse voltages
semiconductor dcr2220y65 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c
semiconductor dcr2220y65 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unles s stated otherwise. do not scale. clamping force: 54kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: y fig.16 package outline 20 offset (nom.) to gate tube 3rd angle projection if in doubt ask do not scale for package height see table ?73.0 nom. ?112.5 max. ?73.0 nom. anode gate ?1.5 cathode hole ?3.60 x 2.00 deep (in both electrodes) device maximum thickness (mm) minimum thickness (mm) dcr1474sy18 35.045 34.395 dcr1475sy28 35.12 34.47 dcr1476sy42 35.35 34.7 dcr1478sy48 35.47 34.82 dcr1574sy28 35.12 34.47 dcr1575sy42 35.35 34.7 dcr1576sy52 35.47 34.82 dcr3910y22 35.045 34.395 dcr3650y28 35.12 34.47 dcr2930y42 35.35 34.7 dcr2630y52 35.47 34.82 dcr2220y65 35.73 35.08 dcr1840y85 36.09 35.44
semiconductor dcr2220y65 10 / 10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. altho ugh we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document an d is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injur y or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electrocut ion or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric cha rge remaining in the product must be discharged and allowed to cool before safe handli ng using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect persons a nd property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. provisional information: some initial development work has been performed. the datasheet represents a view of the end product based on very limited information. certain details will change. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now under stood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgem ent. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their r espective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 ( 0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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